Thin film semiconductor device, production process and information displays
US6872977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2002 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | Nov 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.