Vibratory beam electromechanical resonator
US6873088B2 · kind B2 · utility
4Cited by
11References
49Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 1, 2002 |
| Grant date | Mar 29, 2005 |
| Priority date | — |
| Expiry date | May 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/24
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.