Layer-by-layer etching apparatus using neutral beam and etching method using the same
US6874443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2002 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Mar 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.