System and method for dampening high pressure impact on porous materials
US6875285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Apr 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.