Patent · US Expired

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

US6875544B1 · kind B1 · utility

36Cited by
6References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 3, 2002
Grant dateApr 5, 2005
Priority date
Expiry dateApr 11, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/22
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.