Methods for manufacturing integrated circuit devices including an isolation region defining an active region area
US6875649B2 · kind B2 · utility
3Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2003 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices including an isolation region are provided. The devices include an integrated circuit substrate and a trench in the integrated circuit substrate that defines an active region of the integrated circuit device. A silicon layer is provided on the integrated circuit substrate that extends over an edge of the trench and along an upper portion of a first sidewall of the trench. An insulating material is positioned adjacent the silicon layer that extends across some, or all, of the trench to define the isolation region. Methods of forming such integrated circuit devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.