Inventor · Seojong-myeon, KR

Gyo-young Jin

26Patents
8h-index
36Co-inventors
71Inventor score

Filing activity: Aug 4, 1999 → Feb 7, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US6683364B2 Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same Electricity 74 Expired
US7223649B2 Method of fabricating transistor of DRAM semiconductor device Electricity 58 Expired
US7056781B2 Method of forming fin field effect transistor Electricity 38 Expired
US6194309A Method for forming contact Electricity 29 Expired
US7015106B2 Double gate field effect transistor and method of manufacturing the same Electricity 20 Expired
US6642125B2 Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same Electricity 16 Expired
US7622778B2 Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void Electricity 10 Active
US8884340B2 Semiconductor devices including dual gate electrode structures and related methods Electricity 9 Active
US8264022B2 Semiconductor device including contact plug and associated methods Electricity 8 Active
US9349724B2 Semiconductor device having capacitors Electricity 6 Active
US7501668B2 Semiconductor memory devices having contact pads with silicide caps thereon Electricity 5 Active
US9276074B2 Methods of fabricating semiconductor devices having buried channel array Electricity 4 Active
US7288823B2 Double gate field effect transistor and method of manufacturing the same Electricity 4 Expired
US8362536B2 Semiconductor device having vertical channel transistor and methods of fabricating the same Electricity 4 Active
US7265011B2 Method of manufacturing a transistor Electricity 4 Expired
US7307008B2 Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole Electricity 3 Expired
US8492832B2 Semiconductor device Electricity 3 Active
US8785998B2 Semiconductor device having vertical channel transistor and methods of fabricating the same Electricity 3 Active
US6974752B2 Methods of fabricating integrated circuit devices having uniform silicide junctions Electricity 3 Expired
US6875649B2 Methods for manufacturing integrated circuit devices including an isolation region defining an active region area Electricity 3 Expired
US7144798B2 Semiconductor memory devices having extending contact pads and related methods Electricity 2 Expired
US7737512B2 Integrated circuit devices having uniform silicide junctions Electricity 1 Active
US7329927B2 Integrated circuit devices having uniform silicide junctions Electricity 0 Expired
US7297596B2 Method of manufacturing a semiconductor device having a switching function Electricity 0 Active
US7833864B2 Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.