Method to control the interfacial layer for deposition of high dielectric constant films
US6875677B1 · kind B1 · utility
534Cited by
3References
13Claims
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Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Oct 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming an interfacial layer on a hydrogen-passivated substrate are provided. These methods utilize atomic layer deposition techniques incorporating metal nitrate-based precursors, such as hafnium nitrate or zirconium nitrate, without introducing a hydrating agent, or oxidizing agent, such as water, during the formation of the interfacial layer. Also provided are methods of forming high-k films, by first forming an interfacial layer on the surface of a hydrogen-passivated substrate, and then depositing one, or more, high-k dielectric films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.