Method for fabricating a structure of interconnections comprising an electric insulation including air or vacuum gaps
US6875686B2 · kind B2 · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for fabricating a damascene type structure of interconnections on a semiconductor device. It includes the following steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.