Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
US6876003B1 · kind B1 · utility
46Cited by
8References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 3, 2000 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Mar 3, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
Abstract
A light-emitting layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.