Method and apparatus for forming a capacitive structure including single crystal silicon
US6876050B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 2003 |
| Grant date | Apr 5, 2005 |
| Priority date | — |
| Expiry date | Apr 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal silicon in a substrate such as a silicon-on-insulator (SOI) wafer and can be used in a variety of high bandwidth applications including multi-processor, telecommunications, networking or the like. In one embodiment, a capacitive structure includes single crystal silicon disposed in a first semiconductor material with an insulating layer disposed between the single crystal silicon and the semiconductor material. In one embodiment, a capacitive structure may be formed by laterally growing single crystal silicon through an opening in a trench adjacent to a trench where the capacitive structures is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.