Michael T. Morse
27Patents
10h-index
12Co-inventors
68Inventor score
Filing activity: Jan 6, 1999 → Apr 26, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6393169B1 | Method and apparatus for providing optical interconnection | Physics | 37 | Expired |
| US6653161B1 | Method and apparatus for forming a capacitive structure including single crystal silicon | Electricity | 30 | Expired |
| US6587605B2 | Method and apparatus for providing optical interconnection | Physics | 28 | Expired |
| US6600864B2 | Method and apparatus for switching an optical beam using an optical rib waveguide | Physics | 21 | Expired |
| US6650802B1 | Method and apparatus for switching an optical beam | Physics | 20 | Expired |
| US7082248B1 | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions | Electricity | 16 | Expired |
| US6690036B2 | Method and apparatus for steering an optical beam in a semiconductor substrate | Physics | 14 | Expired |
| US7209623B2 | Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions | Electricity | 14 | Expired |
| US7741657B2 | Inverted planar avalanche photodiode | Emerging Cross-Sectional Technologies | 11 | Active |
| US8435809B2 | Vertical mirror in a silicon photonic circuit | Physics | 10 | Active |
| US6818468B2 | Method and apparatus for incorporating a low contrast interface and a high contrast interface into an optical device | Physics | 9 | Expired |
| US7233051B2 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6811324B2 | Method and apparatus for incorporating a low contrast interface and a high contrast interface into an optical device | Physics | 8 | Expired |
| US6956983B2 | Epitaxial growth for waveguide tapering | Physics | 8 | Expired |
| US6876050B2 | Method and apparatus for forming a capacitive structure including single crystal silicon | Electricity | 5 | Expired |
| US8803268B2 | Vertical mirror in a silicon photonic circuit | Physics | 4 | Active |
| US6351326B1 | Method and apparatus for optically modulating light utilizing a resonant cavity structure | Physics | 4 | Expired |
| US6649990B2 | Method and apparatus for incorporating a low contrast interface and a high contrast interface into an optical device | Physics | 4 | Expired |
| US6987912B2 | Epitaxial growth for waveguide tapering | Physics | 3 | Expired |
| US6989284B2 | Fabrication of a waveguide taper through ion implantation | Physics | 2 | Expired |
| US6891653B2 | Method and apparatus for steering an optical beam in a semiconductor substrate | Physics | 2 | Expired |
| US8338857B2 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions | Emerging Cross-Sectional Technologies | 2 | Active |
| US8278741B2 | Sidewall photodetector | Physics | 1 | Active |
| US8829566B2 | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions | Emerging Cross-Sectional Technologies | 1 | Active |
| US6950577B2 | Waveguide-based Bragg gratings with spectral sidelobe suppression and method thereof | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.