Apparatus and method for obtaining symmetrical junctions between a read sensor and hard bias layers
US6878240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3146
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.