James Mac Freitag
108Patents
14h-index
62Co-inventors
89Inventor score
Filing activity: Sep 18, 2001 → Jan 29, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7522391B2 | Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure | Electricity | 27 | Active |
| US7369371B2 | Magnetoresistive sensor having a shape enhanced pinned layer | Physics | 25 | Expired |
| US9099124B1 | Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion | Physics | 24 | Active |
| US6785102B2 | Spin valve sensor with dual self-pinned AP pinned layer structures | Physics | 24 | Expired |
| US7580230B2 | Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges | Physics | 21 | Active |
| US6636400B2 | Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer | Physics | 20 | Expired |
| US7602589B2 | Magnetoresistive sensor having shape enhanced pinning and low lead resistance | Physics | 19 | Active |
| US7466524B2 | Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip | Physics | 17 | Expired |
| US7848065B2 | Magnetoresistive sensor having an anisotropic hard bias with high coercivity | Physics | 17 | Active |
| US6744607B2 | Exchange biased self-pinned spin valve sensor with recessed overlaid leads | Physics | 16 | Expired |
| US7420787B2 | Magnetoresistive sensor having a shape enhanced pinned layer | Physics | 16 | Active |
| US6624985B1 | Pinning layer seeds for CPP geometry spin valve sensors | Physics | 16 | Expired |
| US7663846B2 | Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning | Physics | 15 | Active |
| US8266785B2 | Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability | Emerging Cross-Sectional Technologies | 14 | Active |
| US7177120B2 | Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer | Physics | 14 | Expired |
| US10762917B1 | Reversed mode spin torque oscillator with shaped field generation layer | Physics | 14 | Active |
| US7038889B2 | Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer | Physics | 14 | Expired |
| US9001473B1 | TMR/CPP reader for narrow reader gap application | Physics | 13 | Active |
| US7564659B2 | Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement | Physics | 12 | Active |
| US7268985B2 | Magnetic head having a layered hard bias layer exhibiting reduced noise | Physics | 12 | Expired |
| US7082017B2 | High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure | Physics | 12 | Expired |
| US9030785B2 | Narrow read-gap head with recessed afm | Emerging Cross-Sectional Technologies | 11 | Active |
| US7676904B2 | Method of manufacturing high sensitivity spin valve designs with ion beam treatment | Emerging Cross-Sectional Technologies | 11 | Active |
| US7038892B2 | Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer | Physics | 9 | Expired |
| US7280314B2 | Lower saturation field structure for perpendicular AFC pole | Physics | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.