Patent · US Expired

Semiconductor element comprising a sequence of layers for converting acoustic or thermal signal and electrical voltage changes into each other and method for producing the same

US6878604B2 · kind B2 · utility

5Cited by

5References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Aigner · Winter Garden, US
Lueder Elbrecht · Munich, DE
Thomas Rainer Herzog · Höhenkirchen-Siegertsbrunn, DE
Stephan Marksteiner · Putzbrunn, DE
Winfried Nessler · Munich, DE

Key dates

Filing date	Jul 3, 2001
Grant date	Apr 12, 2005
Priority date	—
Expiry date	Sep 28, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10N30/079
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.