Method of manufacture of silicon based package
US6878608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2001 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon based package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Forming via holes which extend through the UTSW, forming metallization in the via holes which extends through the UTSW, making electrical contact to the interconnection structure on the first surface. Then bond the metallization in the via holes to pads of a carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.