Method of fabricating barrierless and embedded copper damascene interconnects
US6878621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Feb 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming at least one barrierless, embedded metal structure comprising the following steps. A structure having a patterned dielectric layer formed thereover with at least one opening exposing at least one respective portion of the structure. Respective metal structures are formed within each respective opening. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.