TiW platinum interconnect and method of making the same
US6878626B1 · kind B1 · utility
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10Claims
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Key dates
| Filing date | Dec 20, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Jul 5, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B7/0006
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack includes a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.