Abrasive used for planarization of semiconductor device and method of manufacturing semiconductor device using the abrasive
US6878631B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Oct 15, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1436
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.