Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
US6878959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.