Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells
US6878970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Apr 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8142
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.