Method and apparatus for exposing photoresists using programmable masks
US6879376B2 · kind B2 · utility
9Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2002 |
| Grant date | Apr 12, 2005 |
| Priority date | — |
| Expiry date | Nov 18, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70291
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.