Methods for forming high purity components and components formed thereby
US6881262B1 · kind B1 · utility
3Cited by
9References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Apr 23, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a component is disclosed. The method includes: providing a core containing a porous material; infiltrating the core with silicon carbide; and removing the porous material of the core, thereby forming a porous substrate containing silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.