Method of manufacturing a semiconductor device to provide a plurality of test element groups (TEGs) in a scribe region
US6881597B2 · kind B2 · utility
19Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a technique capable of improving a yield of a semiconductor device by measuring a plurality of TEGs arranged in a scribe region. A first electrode pad connected to each terminal of a TEG is formed as a rectangular, minute, isolated pattern having a side length of about 0.5 μm or shorter and constituted of an uppermost layer wiring on a semiconductor substrate, and therefore, a great number of TEGs can be laid in a first scribe region. The characteristic evaluation or the failure analysis is performed by contacting a nanoprobe having a tip radius of curvature of 0.05 μm to 0.8 μm to the first electrode pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.