Solder bump structure and laser repair process for memory device
US6881654B2 · kind B2 · utility
13Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solder bump structure and laser repair process for memory device include forming a first dielectric layer on a bump pad of a semiconductor wafer. After that, the first dielectric layer is etched to form a contact hole and to expose portions of the bump pad. A second dielectric layer is then formed on a surface of the semiconductor wafer outside of the contact hole. An under bump metallurgy (UBM) process is performed to form a metal layer on a surface of the contact hole, and a solder bump is formed on the metal layer. Finally, the laser repair process for memory device is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.