Etching solution for etching Cu and Cu/Ti metal layer of liquid crystal display device and method of fabricating the same
US6881679B2 · kind B2 · utility
12Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Aug 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S436/80
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.