Film deposition on a semiconductor wafer
US6881681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Heating a reaction chamber or other apparatus in the absence of product wafers to a “curing” temperature above a deposition temperature between the deposition of a film on a first set of semiconductor product wafers and the deposition of a film on a second set of semiconductor product wafers. In some embodiments, a boat with filler wafers is in the reaction chamber when the reaction chamber is heated to the curing temperature. In some examples, the films are deposited by a low pressure chemical vapor deposition (LPCVD) process. With some processes, if the deposition of a film on product wafers is at a temperature below a certain temperature, the film deposited with the product wafer on a boat, filler wafers, and/or other structures in the reaction chamber can cause contamination of product wafers subsequently deposited with a film in the presence of the boat and filler wafers. Contamination from these previously deposited films is inhibited by applying a curing temperature to the deposited fillers in the absence of the product wafers before a film is deposited on the next set of product wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.