Semiconductor light emitting device
US6881982B2 · kind B2 · utility
24Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Mar 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.