Patterning semiconductor layers using phase shifting and assist features
US6883159B2 · kind B2 · utility
11Cited by
4References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 19, 2002 |
| Grant date | Apr 19, 2005 |
| Priority date | — |
| Expiry date | Feb 11, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask and method of patterning a photosensitive layer using a photomask, the photomask including a substrate and a film coupled to substrate. The film is etched with a phase shifted assist feature, a low aspect ratio assist feature or phase shifted low aspect primary features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.