Gary Allen
9Patents
2h-index
18Co-inventors
44Inventor score
Filing activity: Mar 19, 2002 → Apr 26, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6883159B2 | Patterning semiconductor layers using phase shifting and assist features | Physics | 11 | Expired |
| US11417830B2 | Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory | Physics | 4 | Active |
| US11276730B2 | Spin orbit torque memory devices and methods of fabrication | Electricity | 2 | Active |
| US11251365B2 | High blocking temperature spin orbit torque electrode | Performing Operations; Transporting | 1 | Active |
| US7228034B2 | Interference patterning | Physics | 1 | Expired |
| US11367749B2 | Spin orbit torque (SOT) memory devices and their methods of fabrication | Physics | 1 | Active |
| US11430942B2 | Multilayer free magnetic layer structure for spin-based magnetic memory | Electricity | 0 | Active |
| US11683939B2 | Spin orbit memory devices with dual electrodes, and methods of fabrication | Electricity | 0 | Active |
| US11444237B2 | Spin orbit torque (SOT) memory devices and methods of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.