Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
US6884362B2 · kind B2 · utility
1Cited by
7References
14Claims
0Family size
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Key dates
| Filing date | Feb 18, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Apr 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.