Method of fabrication of an infrared radiation detector and infrared detector device
US6884636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2001 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | May 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.