Method for roughening semiconductor surface
US6884647B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Apr 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to provide a method for easily roughening a surface of a semiconductor constituting an LED, a first material 18 and a second material 20 having a property that they are nonuniformly mixed when thermally treated are deposited on a semiconductor 16, the structure is thermally treated, and etching is performed through reactive ion etching in which the etching rate with respect to the first material 18 is slower than the etching rates with respect to the second material 20 and to the semiconductor 16. During this process, a region 22 in which the first material 18 is the primary constituent functions as an etching mask, and a predetermined roughness can be easily formed on the surface of the semiconductor 16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.