Producing method of CMOS image sensor
US6884651B2 · kind B2 · utility
25Cited by
7References
4Claims
0Family size
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Key dates
| Filing date | Jul 10, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Jul 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
A CMOS image sensor is made such that an oxide film, a nitride film, an oxide film, and a nitride film constituting an antireflection film are stacked over the surface of a photodiode, and the oxide film and the nitride film are anisotropically etched, to thereby form sidewalls at both sides of a gate electrode constituting an N type MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.