Method of forming contact plug on silicide structure
US6884736B2 · kind B2 · utility
9Cited by
22References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Oct 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.