Ferromagnetic semiconductor structure and method for forming the same
US6885065B2 · kind B2 · utility
6Cited by
585References
15Claims
0Family size
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Key dates
| Filing date | Nov 20, 2002 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Nov 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.