Method for measuring capacitance-voltage curves for transistors
US6885214B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Nov 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2644
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus for characterizing capacitance and thickness of an insulating layer constructed between a conductive gate and a substrate has at least one test structure formed at a surface of a substrate. Each test structure has a bulk region formed of a semiconductor within the surface. Further the test structure has at least one source region and one drain region within the bulk region. A thin insulating layer is placed above the each source region, each drain region, and the bulk region. A conductive gate is placed above the thin insulating layer. A capacitance-voltage measuring device measures a capacitance value of the test structure, while forcing the bulk region between the source region and the drain region to be floating. An insulating layer thickness calculator determines the thickness of the insulating layer from the capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.