Inventor · Beinan, TW

Sun-Jay Chang

32Patents
8h-index
29Co-inventors
75Inventor score

Filing activity: Jun 18, 1999 → Nov 19, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US8860148B2 Structure and method for FinFET integrated with capacitor Electricity 1,221 Active
US8610241B1 Homo-junction diode structures using fin field effect transistor processing Electricity 31 Active
US7220630B2 Method for selectively forming strained etch stop layers to improve FET charge carrier mobility Electricity 22 Expired
US9076869B1 FinFET device and method Electricity 17 Active
US7279430B2 Process for fabricating a strained channel MOSFET device Electricity 16 Expired
US8946038B2 Diode structures using fin field effect transistor processing and method of forming the same Electricity 13 Active
US6885214B1 Method for measuring capacitance-voltage curves for transistors Physics 12 Expired
US7078723B2 Microelectronic device with depth adjustable sill Electricity 11 Expired
US9305918B2 Method for FinFET integrated with capacitor Electricity 7 Active
US7897501B2 Method of fabricating a field-effect transistor having robust sidewall spacers Electricity 6 Active
US9318621B2 Rotated STI diode on FinFET technology Electricity 5 Active
US7898028B2 Process for fabricating a strained channel MOSFET device Electricity 4 Active
US9093566B2 High efficiency FinFET diode Electricity 4 Active
US9166067B2 Device layout for reference and sensor circuits Electricity 3 Active
US9419087B2 Bipolar junction transistor formed on fin structures Electricity 2 Active
US9570587B2 Dislocation stress memorization technique for FinFET device Electricity 2 Active
US8736355B2 Device layout for reference and sensor circuits Electricity 2 Active
US7190033B2 CMOS device and method of manufacture Electricity 2 Expired
US9293378B2 High efficiency FinFET diode Electricity 1 Active
US9865592B2 Method for FinFET integrated with capacitor Electricity 1 Active
US9679992B2 FinFET device and method Electricity 1 Active
US9780003B2 Bipolar junction transistor formed on fin structures Electricity 1 Active
US6365471B1 Method for producing PMOS devices Electricity 1 Expired
US10269986B2 Rotated STI diode on FinFET technology Electricity 1 Active
US10868112B2 Circuit device including guard ring and method of forming guard ring Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.