Method for metal oxide thin film deposition via MOCVD
US6887523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | May 24, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, β-diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.