Photoresist removing compositions
US6887655B2 · kind B2 · utility
0Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2003 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Nov 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02071
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist polymer remover composition for removing photoresist residuals generated from etching or ashing sub-processes. The disclosed photoresist polymer remover composition includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.