Method of forming a MISFET having a schottky junctioned silicide
US6887747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Aug 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a semiconductor device in which a device isolating insulating film is formed in a periphery of a device region of a semiconductor silicon substrate device region. A side wall insulating film formed of a silicon nitride film is formed to cover the periphery of a channel region on the silicon substrate. A Ta2O5 film, and a metal gate electrode are formed inside a trench whose side wall is formed of the side wall insulating film. An interlayer insulating film is formed on the device isolating insulating film. A Schottky source/drain formed of silicide is formed on the silicon substrate in a bottom portion of the trench whose side wall is formed of the side wall insulating film and interlayer insulating film. A source/drain electrode is formed on the Schottky source/drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.