LDD-type miniaturized MOS transistors
US6887759B2 · kind B2 · utility
5Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2001 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Feb 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for forming, in a substrate (1) having a first type of conductivity, a MOS transistor, comprising the following steps: a) forming on the substrate an insulated gate (3); b) implanting a doping agent having a second type of conductivity; c) forming on the edges of the gate silicon nitride spacers; d) simultaneously oxidising the apparent surfaces of the substrate, the gate and the spacers; and e) drain and source implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.