Franck Arnaud
10Patents
2h-index
29Co-inventors
54Inventor score
Filing activity: Aug 21, 2001 → May 22, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6887759B2 | LDD-type miniaturized MOS transistors | Electricity | 5 | Expired |
| US8329525B2 | Method for fabricating at least three metal-oxide semiconductor transistors having different threshold voltages | Electricity | 2 | Active |
| US11653582B2 | Chip containing an onboard non-volatile memory comprising a phase-change material | Physics | 2 | Active |
| US10714501B2 | Co-integration of bulk and SOI transistors | Electricity | 1 | Active |
| US11690303B2 | Electronic chip with two phase change memories | Electricity | 0 | Active |
| US11329067B2 | Co-integration of bulk and SOI transistors | Electricity | 0 | Active |
| US8106462B2 | Balancing NFET and PFET performance using straining layers | Electricity | 0 | Active |
| US6561839B2 | Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed | Electricity | 0 | Expired |
| US12232435B2 | Chip containing an onboard non-volatile memory comprising a phase-change material | Physics | 0 | Active |
| US12167703B2 | Electronic chip with two phase change memories | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.