Gas-assisted rapid thermal processing
US6887803B2 · kind B2 · utility
14Cited by
19References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2001 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Nov 8, 2021 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF27B17/0025
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.