Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US6888742B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2002 |
| Grant date | May 3, 2005 |
| Priority date | — |
| Expiry date | Jun 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element capable of being written in a reduced time using the spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a ferromagnetic pinned layer, a nonmagnetic intermediate layer, and a ferromagnetic free layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic intermediate layer resides between the pinned layer and the free layer. The free layer has a magnetization with an easy axis in a second direction. The first direction is in the same plane as the second direction and is oriented at an angle with respect to the second direction. This angle is different from zero and π radians. The magnetic element is also configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.