Method of fabrication of thin film resistor with zero TCR
US6890810B2 · kind B2 · utility
31Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Dec 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/006
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film resistor that has a substantially zero TCR is provided as well as a method for fabricating the same. The thin film resistor includes at least two resistor materials located over one another. Each resistor material has a different temperature coefficient of resistivity such that the effective temperature coefficient of resistivity of the thin film resistor is substantially 0 ppm/° C. The thin film resistor may be integrated into a interconnect structure or it may be integrated with a metal-insulator-metal capacitor (MIMCAP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.