Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby
US6890828B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jun 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming interlevel dielectric levels in a multilevel interconnect structure formed by a damascene process. The conductive features characteristic of the damascene process are formed in a removable mandrel material for each level of the interconnect structure. In at least one level, a portion of the mandrel material underlying the bond pad is clad on all sides with the metal forming the conductive features to define a support pillar. After all levels of the interconnect structure are formed, the mandrel material surrounding the conductive features is removed to leave air-filled voids that operate as an interlevel dielectric. The support pillar is impermeable to the etchant such that mandrel material and metal inside the support pillar is retained. The support pillar braces the bond pad against vertical mechanical forces applied by, for example, probing or wire bonding and thereby reduces the likelihood of related damage to the interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.