Electronic device and method for manufacturing the same
US6890834B2 · kind B2 · utility
14Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jan 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.