Scribe street width reduction by deep trench and shallow saw cut
US6890836B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2003 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | May 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method to singulate a semiconductor wafer (100) into chips, trench streets (107) of predetermined depth (105a) are formed across the first, active wafer surface (102) to define the outline of the chips (101). Thereafter, the fabrication of the active first wafer surface is completed and protected. Then, the wafer is flipped to expose the second wafer surface (103), and the wafer is subjected to a cutting saw. The saw is aligned with the trenches in the first surface so that the saw cuts the second surface along streets (106), which extend the trenches through the wafer. The saw is stopped cutting at a depth (105b), when the saw streets just coalesce with the trench streets, respectively, whereby the chips are completely singulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.