Nondestructive characterization of thin films based on acquired spectrum
US6891158B2 · kind B2 · utility
53Cited by
15References
62Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | May 10, 2005 |
| Priority date | — |
| Expiry date | Jun 8, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B15/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.